features ? high voltage operation (vds=28v) gaas fet ? high gain: 15.5db(typ.) at pout=43dbm(avg.) ? broad frequency range : 2110 to 2170mhz ? high reliability description the FLL21E090IY is a high power gaas fet that offers high efficiency, ease of matching, greater consis tency and broad bandwidth for high power l-band amplifiers. this device is targeted for high voltage, low current operation in digitally modul ated base station amplifiers. this product is ideally suited for w-cdma and multi-carrier pcs base station amplifiers while offering high gain, long term reliability and ease of use. edition 1.1 june 2004 1 FLL21E090IY l,s-band high power gaas fet absolute maximum rating item symbol condition unit drain-source voltage v ds v gate-source voltage v gs v total power dissipation p t w storage temperature t stg - o c channel temperature t ch - o c recommended operating condition (case temperature tc=25 o c) item symbol condition unit dc input voltage v ds v forward gate current i gf r g =2 ? ma reverse gate current i gr r g =2 ? ma channel temperature t ch o c electrical characteristics (case temperature tc=25 o c) min. typ. max. pinch-off voltage v p v ds =5v, i ds =151ma -0.1 -0.2 -0.5 v gate-source breakdown voltage v gso i gs =-1.51ma -5 - - v 3rd order intermodulation distortion im 3 --33-30 dbc power gain g p 14.5 15.5 - db drain efficiency d -26- % adjacent channel leakage power ratio aclr - -35 - dbc themal resistance r th channel to case - 1.1 1.3 o c/w note 1 : im 3 , aclr and gain test conditions as follows im 3 & gain : f 0 =2.1325ghz, f 1 =2.1475ghz w-cdma(3gpp3.4 12-0) bs-1 64ch non clipping modulation measured over 3.84mhz at f 0 -15mhz and f 1 +15mhz. aclr : f 0 =2.1325ghz w-cdma (3gpp3.4 12-00) bs-1 64ch non clipping modulation, measured over 3.84mhz at f 0 +/-5mhz esd note : based on eiaj ed-4701 c-111a(c=100pf, r=1.5k ? ) case style : iy class iii 2000v ~ t c =25 o c (case temperature) rating 32 -3 134 limit 155 65 to +175 200 <28 <352 >-31 v ds =28v i ds (dc)=750ma p out =43dbm(avg.) no t e 1 unit item symbol condition limit
2 output power & drain efficiency vs. input power v ds =28v, i ds =750ma, f=2.14ghz output power vs. frequency v ds =28v, i ds =750ma FLL21E090IY l,s-band high power gaas fet two-carrier imd(aclr) vs. output power v ds =28v i ds =750ma fo=2.1325, f1=2.1475ghz w-cdma 3-gpp bs-1 64ch modulation single-carrier aclr vs. output power v ds =28v i ds =750ma fo=2.1325ghz w-cdma 3gpp bs-1 64ch modulation 30 32 34 36 38 40 42 44 46 48 50 52 2.08 2.1 2.12 2.14 2.16 2.18 2.2 frequency [ghz] output power [dbm] pin=22dbm pin=26dbm pin=30dbm pin=34dbm pin=38dbm 32 34 36 38 40 42 44 46 48 50 52 20 22 24 26 28 30 32 34 36 38 40 input pow er [dbm] output power [dbm] 0 10 20 30 40 50 60 70 80 90 100 drain efficiency [%] d pout -60 -55 -50 -45 -40 -35 -30 -25 26 28 30 32 34 36 38 40 42 44 46 output power[dbm] imd[dbc] 0 5 10 15 20 25 30 35 drain efficiency[%] im3 im5 drain efficiency -60 -55 -50 -45 -40 -35 -30 -25 26 28 30 32 34 36 38 40 42 44 46 output power[dbm] aclr[dbc] 0 5 10 15 20 25 30 35 drain efficiency[%] +/-5mhz +/-10mhz drain efficiency
3 FLL21E090IY l,s-band high power gaas fet cw imd vs. tone spacing @v ds =28v, i ds =750ma, fc=2.14ghz pout=43dbm -60 -55 -50 -45 -40 -35 -30 -25 -20 0.1 1 10 100 tw o-tone spacing[mhz] im3[dbc]
FLL21E090IY l,s-band high power gaas fet 4 board layout r=3.5 t=0.8mm v gs v ds c1 c2 c3 c4 c5 c6 c7 l1 c8 c9x5 r1 c11 c10 c12 c13 c14 r2 c15 c16 c17 c18 z1 z2 z3 z4 z5 z6 z7 z8 z9 z10 z11 c1 c3 c4 c5 c6 c7 c2 c8 l1 c9x5 c10 c11 c12 c13 c14 c15 c16c18 c17 r1 r2 z1, z11 9.00mm x 1.78mm transmission line z2 26.2mm x 1.78mm transmission line z3 6.60mm x 1.78mm transmission line z4 6.00mm x 13.0mm transmission line z5 23.0mm x 0.50mm transmission line z6 3.00mm x 25.0mm transmission line z7 3.00mm x 13.0mm transmission line z8 23.0mm x 1.50mm transmission line z9 10.8mm x 1.78mm transmission line z10 22.0mm x 1.78mm transmission line c1,c2 10pf c3 1.0pf c4 2.0pf c5,c6,c7 0.5pf c8 1.5pf c9 0.1uf c10,c15 20pf c11,c16 100nf c12,c17 1000pf c13,c14 10uf c18 22uf l1 3.3nf r1 2.0ohm r2 51ohm board input size r=3.5 t=0.8mm 50mm x 50mm output size r=3.5 t=0.8mm 50mm x 50mm circuit diagram of the board
5 FLL21E090IY l,s-band high power gaas fet s-parameters @v ds =28v, i ds =750ma, f=1.0 to 3.0 ghz [ghz] mag ang mag ang mag ang mag ang 1.00 0.9634 -172.52 0.185 21.926 0.0011 91.071 0.9638 -171.69 1.10 0.9567 -171.64 0.1738 22.708 0.0012 105.34 0.9571 -171.44 1.20 0.9592 -170.81 0.1796 23.891 0.0014 106.3 0.9589 -170.97 1.30 0.9583 -170.19 0.1856 22.494 0.0016 119.39 0.9571 -170.73 1.40 0.9524 -169.69 0.2063 23.295 0.0016 112.69 0.9566 -170.11 1.50 0.9571 -168.96 0.2399 20.502 0.0026 122.64 0.9558 -169.73 1.60 0.9465 -168.85 0.3019 19.887 0.0031 127.43 0.9539 -169.55 1.70 0.9396 -168.87 0.4171 9.7863 0.0039 122.24 0.9461 -169.47 1.80 0.918 -169.14 0.5432 -0.3251 0.004 113.26 0.9385 -169.79 1.90 0.8744 -169.91 0.8481 -13.596 0.0056 111.46 0.9276 -170.16 2.00 0.7691 -169.68 1.4267 -39.755 0.0064 73.076 0.9273 -171.5 2.10 0.6787 -155.22 2.3705 -86.126 0.0054 15.023 0.9018 -177.51 2.11 0.6782 -153.28 2.4453 -92.117 0.0049 4.6718 0.8894 -178.55 2.12 0.6957 -151.96 2.5065 -98.556 0.0047 -10.341 0.8739 -179.66 2.13 0.7087 -150.22 2.5554 -104.83 0.0044 -21.605 0.8562 179.2 2.14 0.7284 -148.84 2.5928 -111.25 0.0038 -31.755 0.8371 178.16 2.15 0.749 -147.98 2.6012 -117.67 0.0035 -51.932 0.8094 177.06 2.16 0.7702 -147.49 2.6085 -124.11 0.0032 -66.043 0.7809 176.19 2.17 0.785 -146.95 2.5937 -130.41 0.0034 -81.24 0.7498 175.39 2.18 0.8009 -146.8 2.5666 -136.59 0.0032 -99.392 0.7194 174.76 2.19 0.8271 -146.95 2.5421 -142.62 0.0033 -115.92 0.6822 174.43 2.20 0.84 -146.99 2.5068 -148.63 0.0033 -139.05 0.6444 174.64 2.30 0.9158 -149.95 1.781 154.66 0.0048 129.47 0.4764 -147.42 2.40 0.9361 -151.12 0.9958 115.92 0.0035 97.983 0.7412 -138.53 2.50 0.9386 -151.16 0.5194 93.577 0.0019 94.352 0.8586 -142.64 2.60 0.9455 -150.74 0.3276 82.725 0.0013 88.626 0.9035 -145.25 2.70 0.9501 -150.74 0.1998 72.912 0.001 -156.21 0.9267 -147.06 2.80 0.9493 -149.64 0.1465 77.149 0.0019 -171.48 0.9347 -147.9 2.90 0.9576 -149.8 0.1235 67.632 0.0022 -161.33 0.947 -148.56 3.00 0.9579 -149.24 0.0903 65.358 0.004 -162.61 0.947 -148.91 s11 s22 +10 j +25 j +50 j +100 j +250 j -250 j -100 j -50 j -25 j -10 j 2.0ghz 2.1 2.2 2.0ghz 2.1 2.2 50 0 s21 s12 2. 0 ghz 2. 1 2. 2 0 +90 0. 08 scal e for s12 scal e fo r s 2 1 -90 2. 5 3. 0 180 0. 1
6 FLL21E090IY l,s-band high power gaas fet iy package outline unit : mm 9.779 34.036 12.7 4.826 4.826 r1.524 3.251 29.50 1.575 0.152 9.98
7 FLL21E090IY l,s-band high power gaas fet for further information please contact : eudyna devices usa inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. tel: (408) 232-9500 fax: (408) 428-9111 www.us.eudyna.com eudyna devices europe ltd. network house norreys drive maidenhead, berkshire sl6 4fj united kingdom tel: +44 (0) 1628 504800 fax: +44 (0) 1628 504888 caution eudyna devices inc. products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: ? do not put these products into the mouth. ? do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by- products are dangerous to the human body if inhaled, ingested, or swallowed. ? observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. eudyna devices asia pte. ltd. hong kong branch rm.1101,ocean centre, 5 canton road tsim sha tsui, kowloon, hong kong tel: +852-2377-0227 fax: +852-2377-3921 eudyna devices inc. 1000 kamisukiahara, showa-cho nakakomagun, yamanashi 409-3883, japan (kokubo industrial park) tel +81-55-275-4411 fax +81-55-275-9461 sales division 1, kanai-cho, sakae-ku yokohama,244-0845,japan tel +81-45-853-8156 fax +81-45-853-8170 eudyna devices inc. reserves the right to change products and specifications without notice.the information does not convey any license under rights of eudyna devices inc. or others. ? 2004 eudyna devices usa inc. printed in u.s.a.
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